| PART |
Description |
Maker |
| 604B 1002A 1502A 602BI 1502BI |
TRIAC|400V V(DRM)|6A I(T)RMS|TO-218VAR
TRIAC|400V V(DRM)|15A I(T)RMS|TO-218VAR
SOT23, Low-Power µP Supervisory Circuits with Battery Backup and Chip-Enable Gating
TRIAC|400V V(DRM)|10A I(T)RMS|TO-218VAR 可控硅| 400V五（DRM）的| 10A条口（T）的有效值|18VAR
|
Rochester Electronics, LLC
|
| BCR08AS-12A-15 |
Triac Low Power Use
|
Renesas Electronics Corporation
|
| BCR1AM-12A BCR1AM-12A-A6 BCR1AM-12A-TB |
Triac Low Power Use
|
Renesas Electronics Corporation
|
| BCR3AM-14B-15 |
Triac Low Power Use
|
Renesas Electronics Corporation
|
| BCR08AM-14A BCR08AM-14A-A6 BCR08AM-14A-TB |
Triac Low Power Use
|
Renesas Electronics Corporation
|
| BCR3KM-12RA-A8 BCR3KM-12RA |
Triac Low Power Use
|
Renesas Electronics Corporation
|
| BCR08AS-12A-T14 BCR08AS-12A |
Triac Low Power Use
|
Renesas Electronics Corporation
|
| BCR12PM-12LB-A8 BCR12PM-12LB-15 |
600 V, 12 A, TRIAC, TO-220AB TO-220F, 3 PIN
Triac Medium Power Use (The product guaranteed maximum junction temperature of 150?C)
|
Lattice Semiconductor, Corp.
Renesas Electronics Corporation
|
| BCR1AM-8 |
MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE PLANAR PASSIVATION TYPE
|
Mitsubishi Electric Corporation
|
| CQ202-4M CQ202-4N CQ202-4D CQ202-4B |
TRIAC|200V V(DRM)|4A I(T)RMS|TO-202 可控硅| 200伏五（DRM）的| 4A条口T）的有效值|02
TRIAC|400V V(DRM)|4A I(T)RMS|TO-202
From old datasheet system
4.0 AMP TRIAC 600 THRU 800 VOLTS
Leaded Thyristor TRIAC
|
Unisonic Technologies Co., Ltd.
Central Semiconductor Corp.
|
| MAC137-600-BG MAC137-700-BS MAC137-500-BS |
600 V, 8 A, TRIAC, TO-220AB
700 V, 8 A, TRIAC
500 V, 8 A, TRIAC
|
MOTOROLA INC
|
| BCR16LM-14LB-A8 BCR16LM-14LB-15 |
Triac
Triac Medium Power Use
|
Renesas Electronics Corporation
|
